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tures include adjustable and fixed voltage output options, ON/ OFF control, power-good with 500 μsec delay, bypass pin for ultra-low noise, over temperature and over current protection. They are rated over -40°C to 125°C junction temperature, and are stable with small ESR ceramic capacitors. The three parts in this release are PS22921, PS22922 and PS22924, respectively delivering 0.5, 1.0 and 2.0A from packaging styles of SOT23-5, SOT223 and SOIC-8 EDP. Prices are in the region of 5 to 15 US cents depending on specification and volume. Plessey, www.plesseysemiconductors.com Low phase noise TCXO IQD’s IQXT-60 series temperature compensated crystal oscillator (TCXO) has typical phase noise figures of -63 dBc/Hz at 10 Hz and -161 dBc/Hz at 100 kHz, coupled with a low current consumption of around 5.0 mA. In a miniature 3.2 x 2.5 mm ceramic package measuring only 1.0 mm high, the new model is available at any frequency from 4.0 MHz to 54.0 MHz; this is wide for a TCXO and removes the need for external dividers or multipliers in many applications. The frequency stability of ±2.5 ppm over the operating temperature range of –30 to +75C and frequency tolerance of ±0.5 ppm matches existing industry standards. The IQXT-60 series has an HCMOS output capable of driving 15 pF whilst operating from a standard 3.3, 2.8 or 2.5V power supply. IQD, www.iqdfrequencyproducts.com High-speed, low-density CMOS SDRAM Alliance Memory has introduced a high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers access time from clock of 5.4 nsec at a 7-nsec clock cycle, and a clock rate of 143 MHz. The part is intended for applications requiring high memory bandwidth, such as highperformance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) power supply. The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Alliance Memory’s “legacy” ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. Alliance Memory, www.alliancememory.com. IGBT/SiC FET gate drivers TI has announced 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs. UCC27531 and UCC27532 output stage gate drivers with split output claim the most efficient output drive capability, shortest propagation delay and increased system protection for isolated power designs, such as solar inverters, uninterruptible power supplies and electric vehicle charging. Next-generation IGBT- and SiC FET-based designs require both power and signal isolation from the noisy switching environment of the power stage. UCC27531 features output drive capability of peak current of 2.5A source and 5A sink, allowing fast charging of IGBTs. It has 17 nsec typical propagation time, provides UVLO settings and rail-torail output voltage, and handles noisy environments – negative input voltage handling allows the driver to support many industrial designs. Split-output configuration improves Miller turn-on immunity and prevents damage of IGBT/MOSFET. The UCC27531 and UCC27532 come in a 6-pin, SOT-23 package priced at $0.75 (1,000). The UCC27531EVM-184 IGBT driver daughter card evaluation module is priced at US$49: a PSpice model and application note “35-V single-channel gate drivers for IGBTs” is available. Texas I nstruments, www.ti.com/ucc27531-pr-eu Optical T-o-F proximity sensor Intended to solve a particular problem in smartphone design, ST has introduced a combined proximity and ambient light sensor that delivers fast, accurate and reliable sensing under the most difficult conditions. It uses time-of-flight measurement, of pulsed infra-red light, to accurately measure distance to a nearby object with high reliability: built-in ambient light sensing ensures that it works under all lighting conditions. Combining three optical elements in a single package, the VL6180 is the first member of ST’s FlightSense family: optical sensing technology can reduce the incidence of dropped calls and enables new user interactions with smartphones, ST says. It enables accurate and reliable calculation of the distance between the smartphone and the user. Instead of estimating distance by measuring the amount of light reflected back from the object, which is significantly influenced by colour and surface, the sensor precisely measures the time the light takes to travel to the nearest object and reflect back to the sensor – the first time this has been done in a form factor small enough to integrate into a product such as a smartphone. ST Microelectronics, www.st.com Ultra-low power 32-bit RX MCUs Renesas is expanding the RX family of microcontrollers to include the lowest power, lowest cost RX 32-bit MCU for the embedded market, integrating as little as 8 KB of flash memory. The RX100 Series MCUs, which are based on a proven 130nm, low-power process technology, can run at 32MHz, delivering 1.56 DMIPS/MHz throughput, consuming only 110 μA/ MHz power in full active mode and targeting only 350 nA in the standby mode. This achieves an even lower cost and power consumption than the RX200 series already in the market. The RX100 series is intended for low power applications such as wearable/battery powered applications including medical and sensor products. The very figure of 350 nA current consumption and 70 μA/DMIPS is the kind of power consumption typically only found in the 8-bit market, Renesas claims. Samples of the RX100 offering flash memory integration from 8 KB to 128 KB, are now available and mass production is scheduled for 4Q of 2013. Renesas Electronics Europe, www.renesas.eu. ne w ww.edn-europe.com MARCH 2013 | EDN Europe 43


EDNE MARCH 2013
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