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EETE APRIL 2013

New 650V Rapid 1 and Rapid 2 Diode Families Infineon Enters the Hyperfast Silicon Diode Market As a perfect partner to CoolMOS™ and discrete IGBTs such as TRENCHSTOP™ 5, the Rapid diode families provide outstanding cost/performance ratio in AC/DC stages, such as PFC stages and free-wheeling diodes in DC/DC stages. Split into two families, the Rapid 1 is VF optimized for applications switching between 18kHz and 40kHz, whilst the Rapid 2 is Qrr optimized to o“ er outstanding performance between 40kHz and 100kHz. Key features and benefi ts of the new 650V Rapid 1 and Rapid 2 Diode families  650V repetitive peak reverse voltage as standard for higher reliability  Temperature stability of major electrical parameters  Lowest Irrm for improved Eon losses of the boost switch  S-factor >>1 for outstanding EMI behaviour  Rapid 1 Diode – VF of 1.35V, trr < 100ns  Rapid 2 Diode – lowest Qrr:VF , trr < 50ns For further information please visit our website: www.infi neon.com/rapiddiodes


EETE APRIL 2013
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