044-045_EETE-VF

EETE DECEMBER 2012

DESIGN & PRODUCTS DC/DC converters for curved, uneven Thin-film thermoelectric modules offer higher or thermally non-conductive surfaces cooling capacity and lower heat flux density The BAP 236TH Series dc/dc converters from Absopulse Nextreme Thermal Solutions has introduced a new series of generate up to 250W output power, with cooling guaranteed thin-film thermoelectric modules that offer higher cooling ca- by optimally adapted heat-sink fins on top of the units. The pacity, robust mechanical design and source-matched heat flux converters can be installed on density for easier integration into uneven and non-conductive existing electronic systems. At 1.1 surfaces, such as plastic and mm high, the new eTEC MA8000 are suitable for installation on Series is designed to provide the curved surfaces of vehicles low-profile thermal management or machine chassis. They have solutions for medium heat flux ap- generous design headroom plications in markets including pho- and are rated for operation tonics, electronics, test and measurement, and aerospace. The over a -20oC to +50ºC tem- MA8000 Series includes five new modules that can pump from perature range for full specification. The units comply with 10 to over 80 watts of heat at an ambient temperature of 25°C EN/UL60950 and equivalent industrial safety standards. A with footprints ranging from 63 to 375 mm². With heat flux den- railway grade version which meets EN50155 is also avail- sities ranging from 16 W/cm² to 22 W/cm², the MA series offers able. The BAP 236TH converters operate from inputs of the ability to match thermoelectric cooling designs more easily 24V (21-30V), 48V (42-60V) or 125V (105-145V), equivalent to heat sources and existing convection-based heat rejection voltage ranges meeting EN50155 and provide tightly regu- systems. The new modules fill the gap between traditional lated outputs of 24V, 48V or 125Vdc. Other input/output thermoelectrics that offer 6-8 W/cm² and Nextreme’s HV series configurations are available on request as well. An optional that pumps heat in excess of 100 W/cm². The MA8000 series built-in redundancy diode allows for paralleling and N+1 op- features a high-strength seal ring made from Cirlex polyimide eration. The redundancy diode also allows for connection to film that provides mechanical isolation across the thermoelectric a back-up battery. Efficiency is 85% at full load, depending device, virtually eliminating vertical force and sheer issues. The on the input/output configuration. The converters are filtered seal ring also serves as a barrier to moisture and other contami- to meet EN55022 Class B conducted and radiated require- nants that could affect the performance of the module. ments. Protection features include 2250Vdc input/output iso- Laird Technologies lation, overload, over-voltage and short circuit protection with www.lairdtech.com thermal shutdown and self-resetting. An output fail alarm (Form C) is available as an option. Other options include GaN power transistors conformal coating, heavy ruggedizing and extended tem- perature ranges. The units are housed in compact, ruggedly deliver superior linear performance constructed 113x115x261mm chassis-mount enclosures. RF Micro Devices has production released two linear gal- Absopulse lium nitride (GaN) RF unmatched power transistors (UPTs) - www.absopulse.ch RFHA3942 (35W) and RFHA3944 (65W) - that deliver superior linear performance versus compet- ing GaN transistors. The release Industrial SATA II solid state drive supports of the RFHA3942 and RFHA3944 follows the previous release of the up to 260MB/s data rate RF393X series of UPTs targeting With the Industrial SATA II SSD (solid state drive) of the X-500 continuous wave (CW) and pulsed Series, Swissbit AG is extending its industrial 2.5” SSD product peak power applications. This new series of linear GaN line. The storage solution achieves a data rate on SATA II of up discrete amplifiers is optimized for broadband applications to 260MB/s and an impressive 15,000 requiring linear back-off operation or reduced spurious per- IOPS with 4k random accesses. Added formance. The GaN UPTs target new and existing commu- to this are such features as NCQ, nication architectures requiring improved broadband linear TRIM, the ATA security set and in-field performance in support of high peak-to-average modulation update. To ensure the absolute reliabil- waveforms. The RFHA3942 and RFHA3944 are tunable over ity of the power fail protected X-500 a broad frequency range (DC to 4 GHz) and provide CW Series, Swissbit combines sophisticat- peak power of 35 W and 65 W respectively. They also offer ed mechanisms and augments these with the S.M.A.R.T. (self- high gain of 15dB and high peak efficiency of >55%. Using monitoring, analysis and reporting technology) protocol, the an IS95 9.8 dB PAR signal tuned to 2.1 GHz, the RFHA3942 lifetime monitoring tool or SDK and an efficient BCH-ECC (error achieves -43 dBc adjacent channel power (ACP) at 34 dBm correction code) unit. The X-500 Series is available in storage POUT and the RFHA3944 achieves -54 dBc ACP at 37 dBm densities from 16GB to 512 GB as SLC (single level cell) and POUT. Additionally, the RFHA3942 and RFHA3944 offer high in MLC (multi level cell) versions. For demanding applications, terminal impedance at the input and output of the package, the SLC solution guarantees data preservation of ten years, the enabling wideband gain and power performance advantages MLC version five years according to the JEDEC standard. The in a single amplifier. The RFHA3942 and RFHA3944 are X-500 SSDs can be used in a temperature range from -40 to packaged in a flanged ceramic two-leaded package. 85°C and afford a high level of shock and vibration resistance. RFMD Swissbit www.rfmd.com www.swissbit.com 44 Electronic Engineering Times Europe December 2012 www.electronics-eetimes.com


EETE DECEMBER 2012
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