048-049_EETE-VF

EETE DECEMBER 2012

DESIGN & PRODUCTS 13 Mpixel CMOS image sensor integrates IGBT drive unit boosts the efficiency colour noise reduction of inverters up to 400-kW The T4K37 released by Toshiba Electronics Europe is a 13 Semikron’s latest drive unit Skyper 42 LJ combines the benefits mega pixel, 1.12 micrometre, CMOS image sensor that of digital signal consistency while maintaining full functional- is claimed to deliver the image quality equivalent of a 1.4 ity. To increase the efficiency of inverters up to 400 kW, circuit micrometre pixel im- topologies have been developed that age sensor. Toshiba are optimized for specific applica- implemented back side tions. However, interleaved, multilevel illumination (BSI) tech- and parallel circuits that improve IGBT nology and integrated efficiency also place higher require- colour noise reduction ments on signal performance. The (CNR) to develop this Skyper 42 LJ is a dual-channel IGBT CMOS image sen- driver unit for 600 V, 1,200 V and sor which fits into an 1,700 V IGBT modules. The unit reliably controls IGBT modules 8.5x8.5mm size camera up to 1,000 Amperes with an output current of 80 mA with a module and enables high-quality pictures even in low-light maximum switching frequency of 100 kHz. The highly inte- conditions. The miniaturization of pixel size impacts perfor- grated Semikron ASICs and an optimum power supply concept mance of light sensitivity and signal to noise ratio (SNR) in guarantee extreme signal precision with a maximum jitter of just today’s 1.12 micrometre pixel image sensors. BSI technology +/- 1.5ns across the entire temperature range. In combination helps improve sensitivity, but falls short on elevating image with the low tolerances of the Semikron ASICs the Skyper 42 quality. The company says the T4K37 provides approximately LJ achieves runtime differences below 20 nanoseconds. Due 1.5 times higher SNR value than a 1.12 micrometre pixel im- to the adjustable short impulse suppression and stabilized gate age sensor with no CNR feature, allowing manufacturers to voltages empower an uncompromising parallel IGBT control. deliver products with high-quality imagery, even in low-light Despite its high performance, the Skyper 42 LJ offers maximum conditions. security. SoftOff and overvoltage recognition securely switch Toshiba Electronics Europe off any current. The separate transfer of switching and error www.toshiba-components.com signals allows for rapid error feedback, even in 3-level applica- tions. Thanks to the adjustable error management, both the integrated protection circuit and the paramount controller are N-channel MOSFET transistor in a TDFP able to quickly respond to system errors. The isolated informa- tion transfer uses square wave signals, which makes at signifi- offers high temperature benefits cantly more robust than traditional inductive transfer. This way, CISSOID has introduced the latest member of the company’s the driver unit safely switches interfering voltages up to 4 kV on EARTH family of general purpose transistors. The CHT- the signal wires. The Skyper 42 LJ can run external circuits for NMOS8001 is an N-channel MOSFET guaranteed for operation excess temperature or excess voltage without a separate power from -55°C up to +225°C. The supply, so the error signal can be transmitted to the control unit device is available in a thin dual separately. flat pack (TDFP) hermetically Semikron sealed Ceramic SMD package, www.semikron.com as small as 5x5.5 mm (PCB footprint). The transistor is High permissive current capacitor series capable of switching a current up to 1 A (continuous) or block- targets automotive applications ing a voltage up to 80 V with Murata has added three new multilayer monolithic ceramic a drain cut-off current as low capacitors to its EVC series of high permissive current as 10uA at 225°C. In repetitive capacitors. These surface mounting capacitors measure pulse conditions, it is able to handle peak currents up to 3.3 A 16x20mm and have an EIA at 225°C. The NMOS8001 is a logic-level device, i.e. it can be U2J temperature character- directly driven by a 0-5V logic signal. The gate is protected by istic that supports an operat- anti-series diodes, with ESD rating up to 2 KV HBM, allowing ing temperature range from a negative gate-to-source bias which gives more flexibility to -55 to +125ºC. An absolute circuit designers. With a static on-state resistance (RDS-ON) of maximum case temperature of 0.76 Ω at 25°C (1.56 Ω at 225°C) and a total switching energy +150ºC is permitted for a short of 413 nJ (at 40 V/1 A), the CHT-NMOS8001 offers a perfect duration. The additions to the trade-off between conduction and switching losses for current EVC series are 1.2uF / 500 VDC, 300 nF / 1kV and 100 nF / switching in the range between 100 mA and 500 mA, e.g. in 1.4 kV. The maximum allowable current, at 100 kHz, is 30A low-power low-voltage flyback DC-DC converters. The CHT- (RMS). Typical applications for the EVC series include use as NMOS8001 will find its use in a number of designs involving low a smoothing or snubber capacitor for inverter/converter ap- and medium power switching, power management and signal plications or as a resonance capacitor for a wireless charging conditioning in applications like Oil & Gas (down-hole tools and system. smart completion), aeronautic, industrial and aerospace. Murata Europe CISSOID www.murata.eu www.cissoid.com 48 Electronic Engineering Times Europe December 2012 www.electronics-eetimes.com


EETE DECEMBER 2012
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