020-021-022_EETE-VF

EETE FEBRUARY 2013

650V TRENCHSTOP™5 Introducing a Technology to Match Tomorrow’s High Efficiency Demands The new TRENCHSTOP™5 IGBT technology from Infi neon redefi nes the “Best-in-Class IGBT” by providing unmatched performance in terms of eˆ ciency. When high eˆ ciency, lower system costs and increased reliability are demanded, TRENCHSTOP™5 is the only option. The new TRENCHSTOP™5 IGBTs deliver a dramatic reduction in switching and conduction losses – for example in application measurement 1.7% eˆ ciency improvement – whilst also o” ering a 650V breakthrough voltage. Can you a” ord to wait for the competition to catch up? Key features and benefi ts of the brand new 650V TRENCHSTOP™5 IGBT technology  New benchmark in terms of Best-in-Class eˆ ciency  Lowest ever switching losses  VCE(sat) more than 10% lower than previous generation  650V breakthrough voltage  Temperature stable Vf value of Infi neon’s free-wheeling Rapid diode  2.5 factor lower Qg compared to HighSpeed 3 For further information please visit our website: www.infi neon.com/trenchstop5


EETE FEBRUARY 2013
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