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Samsung bolsters mobile memory Samsung described its work on advanced memories for mobile systems including LPDDR4 DRAMs and a novel memory stack for wearable devices in an interview with EE Times at the International CES. Factors driving advanced mobile memory include the need to process high-quality video, increasing expectations for compute power in low-to-mid tier phones, and the expanding Internet of Things with its plethora of sensors. Samsung launched a 20nm LPDDR4 4GB chip late last year. The 336b chip can handle data rates up to 3,200 Mbits/s while consuming 1.1V. A 20nm LPDDR3 chip is also in production. Samsung officials did not comment on the future of mobile memory made in finer design rules. Low power memory density is growing at a rapid rate, Samsung’s Stephen Lum told EE Times. Tablets that previously had 7.5 GBytes on average have moved to 13.6 GBytes per system while smartphones are expected to average 10.9 GBytes per system in 2015. The overall DRAM demand has skyrocketed as a result, with a 50% growth in bits. ”We expect 11 different sensors in smartphones in 2015 -- that affects both working memory, DRAM, and storage memory, eMMC,” said Lum, a mobile memory group product marketing manager. “Higher res displays are getting more data, more pixels…and you also need more bandwidth to process that,” he added. While the LPDDR4 chip received an honorary innovation award at CES, it won’t make its way to flagship phones until later this year when Samsung’s Chinese partners ship devices currently in development. LPDDR3 will remain the dominant memory in mid-and-low tier devices through 2016, Lum said. Samsung www.samsung.com 960GB SSDs in 2.5” standard form-factor Toshiba Electronics Europe has released two new enterprise solid state drives (eSSDs) series – the HK3E2 for valueendurance workloads and the HK3R2 drive for read intensive workloads. These 6Gbit/s SATA Enterprise SSDs join the company’s broad portfolio of enterprise storage solutions featuring a variety of endurance ratings to meet the needs of specific application requirements and customer environments. Available in capacities up to 800GB in a 2.5-inch standard form-factor (7mm thick), the HK3E2 is designed for mainstream enterprise applications such as exchange mail servers, web servers, database servers, indexing servers, and data centre storage workloads. The HK3E2 Series has a three drive writes per day (DWPD) endurance specification for five years, with random 4KiB enterprise workload. The read intensive HK3R2 series is available in capacities up to 960GB in a 2.5” standard form-factor and is designed for read intensive applications and workloads such as read caching, video streaming and data centre storage. The HK3R2 has an endurance rating of one DWPD for five years with a random 4KiB enterprise workload. Toshiba Electronics Europe www.storage.toshiba.eu Low-power FRAM with integrated counter function, for energy harvesting apps Fujitsu Semiconductor’s MB85RDP16LX is an ultra-lowpower FRAM device with an integrated binary counter function. It incorporates multiple optimisations to reduce energy consumption to less than 10% of that required by standard FRAM solutions. With the MB85RDP16LX, Fujitsu is targeting industrial automation applications involving energy harvesting for rotary encoders, motor control and sensors. The ultra-low-power device can enable self-powering solutions such as the Wiegand wirebased platform being offered by iC-Haus. Significant energy savings have been achieved by integrating the counter function into the FRAM device. Conventional system environments using standard memory require the MCU to read data from the memory device before performing computation and then writing new data back to the memory to complete the counting operation. In contrast, MB85RDP16LX replaces these separate read/write operations with a single command from the MCU, resulting in energy savings of up to 94%. The power-up time of MB85RDP16LX has been optimised to 5 μsec, which is 38 times faster than standard FRAM devices. MB85RDP16LX can be connected via single- and dual-SPI interfaces. MB85RDP16LX has been specified for an operating temperature range of -40–105 °C. Fujitsu Semiconductor http://fujitsu-semiconductor.eu ©: Thin Film Electronics ASA (above), Daimler AB/BASF SE (middle), Holst Centre (below) The No. 1 Event for Printed Electronics www.lopec.com 7th International Exhibition and Conference for the Printed Electronics Industry Exhibition: March 4 – 5, 2015 Conference: March 3 – 5, 2015 Messe München, Germany LOPEC Printed Electronics – We Build the Market www.electronics-eetimes.com Electronic Engineering Times Europe January 2015 31


EETE JAN 2015
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