Memory Products 3 Serial EEPROM Microchip offers the broadest range of Serial EEPROM devices. Our Serial EEPROMs are low-power, non-volatile memory devices with robust operating ranges, smallsize and byte-alterability, making them ideal for data and program storage. Serial EEPROMs can be written more than 1 million times. Innovative low-power designs and extensive testing have ensured industry-leading endurance and best-in-class quality. Key Features ■ Broad range of densities: 128 bits to 1 Mbit ■ Serial architecture: I2C™, SPI, UNI/O® bus, Microwire ■ Tiny 3-, 5-, 6-- and 8-pin packages; die and wafer ■ Innovative, low-power designs ■ Industry-leading endurance ■ Wide temperature and voltage range • Operating voltage: 1.7 to 5.5 V • Temperature range: up to 150°C ■ Fast read and write times ■ Flexible • Byte-write capability • Multiple package options • Custom programming options • Application-specific serial memory ■ ISO/TS16949-compliant Robust Design ■ ESD protection • > 4000V Human Body Model (HBM) • > 400V Machine Model (MM) • > 1000V charged device model ■ Latch-up protection > 200 mA on all pins ■ ESD-induced latch-up > 100 V (MM) on Vdd; > 400 V on all I/O; > 1 M cycles endurance and > 200 years data retention ■ Up to 150°C operation (read and write) ■ Power-On Reset (POR) and Brown-Out Reset (BOR) • Effective protection against noisy automotive environments • Eliminates false writes ■ Schmitt Trigger input filters for noise reductions ■ Complete traceability including die location on wafer Industry-Leading Testing Microchip’s best-in-class field performance is the combined result of world-class manufacturing, wafer-level burn-in and wafer probe quality screens. Microchip’s Triple- Test Flow is currently the most robust testing procedure for Serial EEPROM devices in the industry. It tests each cell of each die three times and performs extensive endurance and data retention tests to ensure quality and reliability. Infant mortality of Microchip Serial EEPROMs is among the lowest in the industry due to this extensive testing, excellent fabrication and highly-reliable memory cell design. Triple-Test Flow Microchip tests every cell in wafer form twice, then performs a final test after assembly. 1. Wafer Probe ntion ke o 0°Main Goal: Zero Defects ■ Full verification of datasheet parameters for functional compliance at die and package level ■ Removal of manufacturing defects to ensure highest quality and reliability ■ Screening out of functional devices that may fail in the future 2. Wafer Probe Retention Bake Full-functional tests on 100% of die and bits; 85 or 125°C 5,000 E/W cycles on all bits 2nd 100% bit test (25°C) full-functional screen 250°C up to 24 hours (equivalent to 100 years at 100°C) 3. Assembly and Final Test Any die with charge loss in any cell between the two probes is rejected to prevent infant mortality.
EETE MAR 2015
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