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EETE MAR 2015

Serial EEPROM Products I2C™ Memory Products Device Density (Organization) 6 Memory Products Max. Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E, H) (°C) Endurance (E/W Cycles) Data Retention Write-Protect (Hardware) Packages 24XX00 128 bits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years – PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN 24XX01/014 1 Kbit (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, SC70 24XX02/024 2 Kbits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, SC70 24XX04 4 Kbits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, WLCSP 24XX08 8 Kbits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP 24XX16 16 Kbits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, WLCSP 24XX32 32 Kbits (×8) 400 kHz 1.7–5.5 V −40 to 125 1 M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, WLCSP 24XX64/65 64 Kbits (×8) 1 MHz 1.7–5.5 V −40 to 125 1 M/10 M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, WLCSP 24XX128 128 Kbits (×8) 1 MHz 1.7–5.5 V −40 to 125 1 M 200 years ü PDIP, SOIC, TSSOP, 2 × 3 TDFN, 6 × 5 DFN, WLCSP 24XX256 256 Kbits (×8) 1 MHz 1.7–5.5 V −40 to 125 1 M 200 years ü PDIP, SOIC, TSSOP, 6 × 5 DFN, MSOP, WLCSP 24XX512 512 Kbits (×8) 1 MHz 1.7–5.5 V −40 to 125 1 M 200 years ü PDIP, SOIC, TSSOP, 6 × 5 DFN, WLCSP 24XX1024 1 Mbit (×8) 1 MHz 1.7–5.5 V −40 to 125 1 M 200 years ü PDIP, SOIC, SOIJ, 6 × 5 DFN UNI/O® Bus EEPROM Products Device Density (Organization) Max. Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E) (°C) Endurance (E/W Cycles) Data Retention Write-Protect (Software) Packages 11XX010 1 Kbit (×8) 100 kHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, TO92, WLCSP 11XX020 2 Kbits (×8) 100 kHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, TO92, WLCSP 11XX040 4 Kbits (×8) 100 kHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, TO92, WLCSP 11XX080 8 Kbits (×8) 100 kHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, TO92, WLCSP 11XX160 16 Kbits (×8) 100 kHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP, TO92, WLCSP Microwire EEPROM Products Device Density (×8 or ×16) Max. Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E,) (°C) Endurance (E/W Cycles) Data Retention Write-Protect (Hardware) Read Current Packages 93XX46A/B/C 1 Kbit 3 MHz 1.8–5.5 V −40 to 125 1 M 200 years – 1 mA PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP 93XX56A/B/C 2 Kbits 3 MHz 1.8–5.5 V −40 to 125 1 M 200 years – 1 mA PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP 93XX66A/B/C 4 Kbits 3 MHz 1.8–5.5 V −40 to 125 1 M 200 years – 1 mA PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP 93XX76A/B/C 8 Kbits 3 MHz 1.8–5.5 V −40 to 125 1 M 200 years ü 1 mA PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP 93XX86A/B/C 16 Kbits 3 MHz 1.8–5.5 V −40 to 125 1 M 200 years ü 1 mA PDIP, SOIC, TSSOP, SOT-23, 2 × 3 TDFN, MSOP A: ×8 Organization, B: ×16 Organization, C: Selectable ×8 or ×16 Organization SPI EEPROM Products Device Density (Organization) Max. Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E, H) (°C) Endurance (E/W Cycles) Data Retention Write-Protect (Software) Packages 25XX010A 1 Kbit (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP, SOT-23 25XX020A 2 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP, SOT-23 25XX040A 4 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP, SOT-23 25XX080C/D 8 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP 25XX160C/D 16 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP 25XX320A 32 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP 25XX640A 64 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2 × 3 TDFN, MSOP 25XX128 128 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6 × 5 DFN 25XX256 256 Kbits (×8) 10 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6 × 5 DFN 25XX512 512 Kbits (×8) 20 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIC, 6 × 5 DFN 25XX1024 1 Mbit (×8) 20 MHz 1.8–5.5 V −40 to 125 1 M 200 years W, ½, ¼ PDIP, SOIJ, 6 × 5 DFN 1. Voltage Range: AA = 1.7–5.5 V, LC = 2.5–5.5 V, C = 4.5–5.5 V 2. I = −40°C to 85°C, E = −40°C to 125°C, H = −40°C to 150°C 3. All devices are RoHS-compliant 4. Write Protect: W = Whole Array, ½ = Half Array, ¼ = Quarter Array 5. ESD Protection > 4 kV (HBM), > 400 V (MM) on all pins 6. H temperature is SOIC only


EETE MAR 2015
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