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EETE NOVEMBER 2012

650V thinQ!™ SiC Diodes Generation 5 Your Way is our Way: Improve Efficiency and Solution Costs With the 5th generation of SiC Schottky Barrier Diodes Infi neon delivers market leading euniFB03 ciency at an attractive price/performance ratio. Infi neon’s proprietary diuniFB00 usion soldering process is now combined with a new, more compact design as well as latest advancements in thin wafer technology bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf). Key features and benefi ts of Generation 5 thinQ!™ SiC Diodes  Improved EuniFB03 ciency over all load conditions with respect to previous thinQ!™ generations  Vbr increased from 600V to 650V, complementing our 650V CoolMOS™ ouniFB00 er  Temperature independent switching behavior for highly stable switching performance  High operating temperature (Tj max 175°C)  Soft switching reverse recovery waveform leading to low EMI levels Industrial Drives For further information please visit our website: www.infi neon.com/sic-gen5


EETE NOVEMBER 2012
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