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EETE NOV 2013

The tool may also point to extra design-for-test features that may need to be integrated at the design stage of the different chips. The tool covers the entire 2.5D-/3D-stacked IC production flow, including design, manufacturing, test, packaging and logistics. It is aware of the stack build-up (2.5D versus 3D, multiple towers; face-to-face or face-to-back) and stacking process (die-to-die, die-to-wafer, or wafer-to-wafer). CMOS-compatible photonics: one more layer in the 3D stack Today’s current approach to optical I/Os is to use discrete VCSELs (vertical-cavity surface-emitting lasers) at board and rack level only, and achieving higher bandwidth means adding more fibres in a limited space. At chip level and for intra-package connectivity, copper is mostly used. Optical IO program director at imec and responsible for the silicon photonics technology platform, Philippe Absil came with extra solutions for high-speed intra-package interconnects. To support the Terabit-scale Ethernet of the future, transceivers capable of 50Gbit/s+ data rates will be required with operating power scaling down an order of magnitude from 20pJ/bit with today’s embedded optical modules to only a few pJ/bit with imec’s silicon photonics technology platform. integrated optical modules (IOMs). This calls for photonics integrated circuits with absolute nanometer scale fabrication control to achieve high index contrast waveguides (capable of low-loss μm-scale bending radii) and smart routing elements (directional couplers and sub-wavelength gratings). As imec’s answer, Absil unveiled a fully integrated silicon photonics platform to support high-performance optical transceivers (25Gbit/s and beyond), enabling chip-level large-scale integration using standard high-yield 130nm CMOS processes. The researcher presented his results on a photonics demonstrator featuring low loss (2.5dB/cm) strip waveguides with 2.5nm of thickness control and highly efficient grating couplers (2.5dB insertion loss) made of doped glass, with 50GHz-capable Ge-on- Si waveguide photodiodes for the optical-toelectrical (O-to-E) signal conversion, 25Gb/s Mach-Zhender interferometer and micro-ring modulators (28Gb/s at eu.mouser.com Primary Logo The Newest Products for Your Newest Designs® More New Products More New Technologies More Added Every Day Authorised distributor of semiconductors and electronic components for design engineers. www.electronics-eetimes.com Electronic Engineering Times Europe November 2013 13 NewestProd_UK_93x277.indd 1 10/14/13 9:23 AM 40nm CMOS driver chip on top of a photonics chip


EETE NOV 2013
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