Rohm

EETE OCTOBER 2012

Hall A5 Stand 542 SiC BASED SOLUTIONS FOR INVERTERS EV & HEV Solar Transportation ROHM’s new BM6103FV-C Isolated Gate Driver along with ROHM’s SiC MOSFETs and SiC SBDs enable design of smaller, low power consumption inverters with high speed operation. 2500 Vrms Isolated Gate Driver Gate Driver P 800VStable driving up to 800V/400A output Very short input/output delay time IN BM6103FV-C BUF g dSiC FET Core-less transformer technology 5V s Rated output current of 5A (peak) 18V DESAT compatibility 5V Miller Clamp function SiC SBD Small package (SSOP-B20W) N SiC Schottky Barrier Diodes SiC Power MOSFETs Industry lowest forward voltage Low Switching loss Technology for you Sense it Light it Power it ! www.rohm.com/eu


EETE OCTOBER 2012
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